摘要
目的 比较半导体激光、氩激光、532nm激光经瞳孔光凝兔眼视网膜的组织学反应。方法 灰兔5只,每眼以视神经乳头为界分成上、下两个术区,分别经瞳孔用半导体激光、氩激光或532nm激光照射视网膜,每眼均有半导体激光术区。半导体激光、氩激光、532nm激光功率分别为100～300、90～110、100～200mW,脉宽分别为02、01、01s,光斑直径均为200μm。结果 肉眼见半导体激光光斑比氩激光、532nm激光光斑更灰白。形成相似的光斑,半导体激光能量密度为氩激光、532nm激光的3～4倍。光镜下3种激光轻、中度光斑的表现相似,主要影响色素上皮、视细胞层和内外颗粒层;重度光斑表现不同,半导体激光致脉络膜、巩膜内层损伤,视网膜内层影响不大;氩激光、532nm激光使视网膜全层结构混乱,脉络膜改变不明显。透射电镜下见半导体激光光凝致脉络膜毛细血管闭塞,视网膜内界膜正常;氩激光、532nm激光光凝后色素上皮细胞内溶酶体功能活跃,双极细胞空泡变。结论 半导体激光视网膜、脉络膜的吸收率为氩激光、532nm激光的14,光凝时不易掌握合适的反应程度,常规视网膜光凝治疗时,应该选用氩激光或532nm激光。
Objective To study the effects of transpupillary 810 nm diode laser irradiation on chorioretinal lesions of Dutch belted rabbit eyes in comparison with those of argon laser and 532 nm laser. Methods Power, duration and beam spot diameter of diode, argon, and 532 nm laser irradiated to rabbit eyes were 100-300 mW, 0 2 s, 200 μm; 90-110 mW, 0 1 s, 200 μm; 100-200 mW, 0 1 s, 200 μm; respectively. Results Ophthalmoscopically, the diode burns appeared as more grayish patches. Parallel experimental retinal photocoagulation required 2-3 times more power to create ophthalmoscopically similar lesions with the diode laser than with the argon or 532 nm laser. Under light microscope, mild and medium burns which involved the RPE, outer segment of photoreceptor cells with disorganization of outer and inner nuclear layers looked similar among the lasers. Intense diode intense diode laser irradiation resulted in choroidal and inner scleral injuries, while the ganglion cell layer remained spared. Intense argon and 532 nm laser burns showed mild involvement of the choroid, and disorganization of all layers of the retina. Transmission electron microscopy showed that diode laser caused the occlusion of choroidal capillaries. Conclusions As compared with diode laser, argon or 532 nm laser is more suitable for retinal photocoagulation.
出处
《中国激光医学杂志》
CAS
CSCD
2000年第1期25-27,共3页
Chinese Journal of Laser Medicine & Surgery
