摘要
双异质结双极晶体管(DHBT)的性能与发射区-基区(E-B)异质结和基区-集电区(B-C)异质结的能带突变类型关系密切,本文基于热场发射-扩散模型,对两类不同能带结构类型的新型DHBT的性能做了比较分析.结论表明:与作为当今研究热点的E-B和B-C异质结构均为全交错Ⅱ型能带结构的InP/GaSbAs/InP DHBT的性能相比,E-B异质结采用传统Ⅰ型、B-C异质结采用交错Ⅱ型的一类新型能带结构的InAlAs/GaSbAs/InP DHBT虽然在开启电压上更高,但具有更好的电流驱动能力、直流增益和高频性能.
The characteristics of a double heterojunction bipolar transistor（DHBT） depend closely on the type of band alignment structure at the hetero-interface between emitter-base（E-B） heterojunction and base-collector（B-C） heterojunction. Based on thermionic-field- diffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InA1As/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-I E-B junction and a type-II B-C junction and the later has a type-II E-B junction and a type-II B-C junction. The simulation results show that DHBT with a type-I E-B junction and a type-II B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第12期572-577,共6页
Acta Physica Sinica
基金
信息功能材料国家重点实验室2009开放基金(批准号:FMI2009-08)
湖南省教育厅项目(批准号:09C959)
湖南省科技厅项目(批准号:2010TY2003)
浙江省自然科学基金(批准号:LY12F04003)资助的课题~~
