摘要
本文基于与缺陷有关的等效氧化层减薄模型 ,对N -MOS电容样品进行了斜坡电压实验 ,从中提取了有关中位值及标准差 ,用来快速评估栅氧质量及其可靠性。
In this article based on the defects related effective thinning model,the ramp voltage experiments are performed for MOS capacitors with N type substrate.From the test results the median and the standard deviation are abstracted,which is used to assess the quality and reliability of the gate oxide.
出处
《微电子技术》
2000年第1期44-47,共4页
Microelectronic Technology
