摘要
本文报导以固态聚苯乙烯为碳源,经机械抛光和电化学抛光双重处理的铜箔为衬底,用CVD法进行石墨烯可控生长的研究结果。用光学显微镜、原子力显微镜、拉曼光谱、光透射谱、扫描隧道显微镜和场发射扫描电镜对生长的石墨烯进行了表征。研究发现经过抛光处理的铜箔由于其平整的表面和很低的表面粗糙度,在其上生长的石墨烯缺陷少,结晶质量高。而未经抛光处理的铜箔在石墨烯生长过程中,铜箔不平整的表面台阶会破坏其上生长的石墨烯的微观结构,在生长的石墨烯二维结构中产生高密度晶界和缺陷。还在双重抛光处理的铜箔上实现了石墨烯的层数可控生长,结果表明固态碳源聚苯乙烯的量为15 mg时可生长出单层石墨烯,通过控制固态源重量得到了1～5层大面积石墨烯。
This article reports the growth of layer-controlled graphene by chemical vapor deposition,using solid polystyrene as the carbon source and the doubly polished copper foil as the substrate.The graphene was characterized by an optical microscope,atomic force microscopy,Raman spectroscopy,optical transmission spectroscopy,scanning tunneling microscope and field emission scanning electron microscope.The results indicated that graphene grown on polished copper foil with smooth surface and low roughness has less defects and higher quality.For unpolished copper foil,the structure of grown graphene was destroyed by the directional texture consisting of many parallel lines on the Cu surface,and there are high density of defects and grain boundaries in the graphene.The growth of layer-controlled graphene on doubly polished copper foil has been fulfilled.The results show that one monolayer of graphene can be produced when 15 mg of polystyrene is used.1 to 5 layers of graphene could be got by the controlling of the weight of polystyrene.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第2期407-413,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(61176062)
江苏优势学科建设工程项目(PAPD)
关键词
固态碳源
机械抛光
电化学抛光
石墨烯
可控生长
solid carbon source
mechanical polishing
electrochemical polishing
graphene
controlled growth
