期刊文献+

Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics 被引量:10

Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics
在线阅读 下载PDF
导出
摘要 We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube(CNT) film during its intense pulsed emission.We synthesize the CNT film on a tridimensional surface(t-CNT film).The tridimensional surface includes wet etched silicon pyramids,and the Ni layer is electroless plated thereon.The intense pulsed emission characteristics of the t-CNT and planar-grown CNT(p-CNT) films were measured using a diode structure in single-pulse mode.The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/m for t-CNTs,and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ~12.2 V/m.The peak current of the t-CNT film increased by ~39.7% over the p-CNT film.It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films. We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube (CNT) film during its intense pulsed emission. We synthesize the CNT film on a tridimensional surface (t-CNT film). The tridimensional surface includes wet etched silicon pyramids, and the Ni layer is electroless plated thereon. The intense pulsed emission characteristics of the t-CNT and planar-grown CNT (p-CNT) films were measured using a diode structure in single-pulse mode. The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/μm for t-CNTs, and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity -12.2 V/μm. The peak current of the t-CNT film increased by -39.7% over the p-CNT film. It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.
出处 《Chinese Science Bulletin》 SCIE EI CAS 2012年第14期1739-1742,共4页
基金 supported by the National Natural Science Foundation of China (51072184,50972132,51002143 and 60801022) the Aeronautical Science Foundation of China (2009ZE55003 and 2010ZF55013) the Basic and Advanced Technology Program of Henan (092300410139)
关键词 碳纳米管膜 发射特性 强流脉冲 金字塔 微阵列 合成 表面 碳纳米管薄膜 carbon nanotubes, micro-pyramid array, field-screening effect, intense pulsed emission, emission current
  • 相关文献

参考文献14

  • 1Iijima S. Helical microtubules of graphitic carbon. Nature, 1991, 354: 56-58.
  • 2De Heer W A, Chatelain A, Ugarte D. A carbon nanotube field emis- sion electron source. Science, 1995, 270:1179-1180.
  • 3Bonard J M, Croci M, Klinke C, et al. Carbon nanotube films as elec- tron field emitters. Carbon, 2002, 40:1715-1728.
  • 4de Jonge N, Bonard J M. Carbon nanotube electron sources and ap- plications. Philos Trans R Soc Lond A, 2004, 362:2239-2266.
  • 5de Jonge N, Lamy Y, Schoots K, et al. High brightness electron beam from a multi-walled carbon nanotube. Nature, 2002, 420:393-395.
  • 6Teo K B K, Chhowalla M, Amaratunga G A J, et al. Fabrication and electrical characteristics of carbon nanotube-based microcathodes ~br use in a parallel electron-beam lithography system, l Vac Sci Technol B, 2003, 21:693--697.
  • 7cheng Y, Zhang J, Lee Y Z, et al. Dynamic radiography using a car- bon-nanotube-based field-emission X-ray source. Rev Sci lnstrum, 2004, 75:3264-3267.
  • 8Choi W B, Chung D S, Kang J H, et al. Fully sealed, high-brightness carbon-nanotube field-emission display. Appl Phys Lett, 1999, 75:3129- 3131.
  • 9Teo K B K, Minoux E, Hudanski L, et al. Microwave devices: carbon nanotubes as cold cathodes. Nature, 2005, 437:968.
  • 10Choi J H, Choi S H, Han J H, et al. Enhanced electron emission from carbon nanotubes through density control using in situ plasma treat- ment of catalyst metal. J Appl Phys, 2003, 94:487-490.

同被引文献65

引证文献10

二级引证文献11

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部