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Design of GaAs/Al_xGa_(1-x)As asymmetric quantum wells for THz-wave by difference frequency generation 被引量:3

Design of GaAs/Al_xGa_(1-x)As asymmetric quantum wells for THz-wave by difference frequency generation
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摘要 The energy levels, wave functions and the second-order nonlinear susceptibilities are calculated in GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As asymmetric quantum well (AQW) by using an asymmetric model based on the parabolic and non-parabolic band. The influence of non-parabolicity can not be neglected when analyzing the phenomena in narrow quantum wells and in higher lying subband edges in wider wells. The numerical results show that under double resonance (DR) conditions, the second- order difference frequency generation (DFG) and optical rectification (OR) generation susceptibilities in the AQW reach 2.5019 μm/V and 13.208 μm/V, respectively, which are much larger than those of the bulk GaAs. Besides, we calculate the absorption coefficient of AQW and find out the two pump wavelengths correspond to the maximum absorption, so appropriate pump beams must be selected to generate terahertz (THz) radiation by DFG.
出处 《Optoelectronics Letters》 EI 2012年第3期229-232,共4页 光电子快报(英文版)
基金 supported by the National Basic Research Program of China (No.2007CB310403) the National Natural Science Foundation of China (Nos.60801017 and 61172010) the Science and Technology Committee of Tianjin (No.11JCYBJC01100)
关键词 GALLIUM Optical frequency conversion Terahertz waves 非对称量子阱 THz波 砷化铝镓 差频 计算结果 泵浦波长 非线性极化 非对称模型
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