摘要
ZnO是一种宽禁带半导体材料(3.37eV),具有较高的激子结合能(60meV),室温下激子仍然存在。由于其结构特点及优异的光电性能,ZnO在微电子学、光电子学、集成光学和微电子机械系统等高技术领域有着广阔的应用前景,在国内外引起极大的关注。但本征的ZnO呈n型电导,p型ZnO的获得因较强的自补偿效应,存在较大困难,限制了其应用水平。针对ZnO目前的研究、就其本征缺陷、p型掺杂以及新型功能器件等方面做一简要评述。
As a wide band-gap material,ZnO exhibits high exciton binding energy（60meV） as well as band-gap of 3.37eV at room temperature.Due to the excellent optoelectronic properties and unique structure,ZnO shows potential application in microelectronics,optoelectronics,integrated optics and micro electromechanical system（mems）,attracting much attentions at home and abroad.However,intrinsic ZnO is n-type conductance.Originating from the strong self-compensation effects,it is hard to achieve its p-type conductance,which hampers its further application.The current status of intrinsic defects,p-type doping effect and novel functional devices based on ZnO thin films were reviewed.
出处
《化工新型材料》
CAS
CSCD
北大核心
2012年第4期149-152,共4页
New Chemical Materials
基金
上海市自然科学基金(11ZR1426700)
国家自然科学基金(10904042)
教育部科学技术重点项目(210157)
广东省自然科学基金(S2011010001758)
广东省科技计划项目(2011B010400022)
广州市科技计划项目(11C52090779)
关键词
ZNO
本征缺陷
p型电导
功能器件
zinc oxide
intrinsic defect
p-type conductance
functional device
