量子点外延生长新模型(续)(英文)

Novel Scenario for Epitaxial Growth Process of Quantum Dots (Continued)

导出

摘要 3.2 Wetting Layer Tailored by Epitaxial Stress Most epitaxial films wet the substrates to var-ying degrees in heteroepitaxy.In the paradigm systems of the QD epitaxial growth,In As/GaAs(001)and Ge/Si(001),the critical wetting layer(WL)for 3. 2 Wetting Layer Tailored by Epitaxial Stress Most epitaxial films wet the substrates to varying degrees in heteroepitaxy. In the paradigm systems of the QD epitaxial growth, InAs/OaAs （001） and Ge/Si（001）, the critical wetting layer （WL） for the layer-by-layer growth is a few atomic layers in thickness, beyond which quantum dots begin to form.

作者吴巨

机构地区中国科学院半导体研究所半导体材料重点实验室

出处《微纳电子技术》 CAS 北大核心 2012年第4期213-221,共9页 Micronanoelectronic Technology

基金 National Natural Science Foundation of China(60876086,60976057,60990315)

关键词量子点外延生长 EPITAXIAL WETTING indium BONDS floating DIMER crystalline COMPRESSIVE

分类号 TN304 [电子电信—物理电子学]

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参考文献102

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微纳电子技术

2012年第4期

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量子点外延生长新模型(续)(英文)

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