期刊文献+

基于PIN管的大功率射频开关研制 被引量:7

Research and Design of High-Power Capacity RF Switch Based on PIN Diode
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摘要 随着通信系统发射功率的增加,以及工作频率的提高,高功率容量,高隔离,低插损,短响应时间的射频开关尤其重要。文章简要介绍了PIN管单刀双掷射频开关的原理,对高功率容量下PIN二极管的应用关键进行了详细分析,设计了一个工作于200MHz~500MHz,差损小于0.7dB,隔离度大于70dB,驻波比小一地1.5,功率容量100W,开关速度小于20μs的一分四射频开关。 With the RF power and working band increase in communication system, high power capacity, high isolation, low insertion loss, short response time of the RF switch is especially important. The theory of SPDT is introduced briefly, the key application of PIN diode is analyzed under the high power capacity and a lto4 RF switch which working at 200MHz - 500MHz, loss〈0. 7dB, isolation〉70dB, VSWR〈1. 5, Power 100W, response time 〈20 us is designed.
作者 尹帅
出处 《计算机与数字工程》 2012年第3期121-123,共3页 Computer & Digital Engineering
关键词 PIN开关 宽带 开关速度 功率容量 PIN switch, broad band, switch speed, power
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参考文献10

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