摘要
基于带隙基准原理,采用CMOS阈值电压的自偏置共源共栅电流镜技术,设计了一种高精度低温漂基准电压源.该电压基准源采用自偏置阈值电流产生电路,在获得高电源抑制比的同时减少了电压基准源的电流支路,降低了功耗;通过工作于放大状态下的PNP晶体管提高了输出电压的精度及其工艺的可靠性.Hspice仿真结果表明,在5V电源电压下,输出基准电压为1.23V,温度系数为10.58×10-6/℃.在4～6V的电源电压范围内,室温下基准电压的变化为0.3mV,验证了所设计的基准电压源输出基准电压的温度系数小、功耗低与精度高.
A new high-precision voltage reference independent of temperature is presented by employing the self-biased current mirror topologies of subthreshold MOSFETs and based on bandgap voltage principle.With the use of self-biased subthreshold current generator,the topology has a low power and high PSRR.High precision and technology reliability are realized by the PNP device operating in the forward-active region.Hspice results show that the nominal output is 1.23V,the temperature coefficient is 10.58×10-6/℃ for 5V supply voltage.The reference voltage variation is 0.3mV for supply voltage from 4V to 6V at room temperature.So the proposed voltage reference circuit has low temperature coefficient,low power dissipation and high precision.
出处
《兰州交通大学学报》
CAS
2012年第1期127-130,共4页
Journal of Lanzhou Jiaotong University
基金
甘肃省自然科学基金(1112RJZA038)
关键词
基准电压源
自偏置
低温漂
CMOS
voltage reference
self-biased
low temperature coefficient
CMOS
