摘要
本文用两种波长不同的激光——Ar^+激光和CO_2激光,对以石英为衬底的a-Si SOI进行了激光结晶。两者的结晶机理不同,得到了不同的结晶形貌。
Two lasers with different wavelengths-the argon laser and CO2 laser have
been used for laser crystallization of a-Si SOI. Using the argon laser we have a direct heating laser crystallization, while for CO2 laser we have an indirect heating laser crystallization. The crystallization mechanisms for both cases are different and different topographies are obtained.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1990年第10期615-618,629,共5页
Chinese Journal of Lasers
关键词
非晶硅
SOI结晶
激光
外延生长
laser crystallization, SOI structure, amorphous silicon, epitaxial growth
