摘要
从变价金属氧化物n型半导化的内在因素出发,分析了ABO_3型钙铁矿结构的特点,总结归纳结构因素对n型半导化影响的主要规律。综合分析了钙铁矿结构氧化物陶瓷半导化已有的一些较系统的实验研究结果,表明这些结果与本文得到的主要规律能够相互印证。对钙钛矿结构氧化物半导体陶瓷中的电子导电机制,也作了进一步的阐明。
The characteristics of ABO3-type perovskite structure were analyzed based on n-type semiconduction intrinsic factor of the metal oxides with variable valence,and the main rules of the influence of structural factor on the n-type semiconduction were summarized. Some results of previous systematic experiment studies on the semiconduction of the oxides with perovskite structure were analyzed,which shows that the experiment results and the main rules can be verified each other. The electron conduction mechanism of semiconducting ceramic oxide with perovskite structure was also explained further.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2000年第3期44-47,共4页
Materials Reports
关键词
钙钛矿结构
n型半导化
半导体陶瓷
结构陶瓷
perovskite structure ,n-type semiconduction, oxygen vacancy, variable valence,hopping conduc-tion
