摘要
采用溶胶–凝胶工艺制备了具有高度(100)择优取向的(Pb,La)(Zr,Ti)O3反铁电厚膜(厚约2.2μm)。研究了该反铁电厚膜在不同温度下的电场诱导相变效应和不同电场强度下的温度诱导相变效应。结果表明:(Pb,La)(Zr,Ti)O3反铁电厚膜在室温下处于反铁电态;随着温度升高,厚膜的相变开关电场强度逐渐降低,反铁电态越来越不稳定,当温度高于132℃且电场强度为0 kV/cm时,厚膜处于顺电态;随着外加电场强度的增大,厚膜的AFE(反铁电态)-FE(铁电态)相变温度向低温方向漂移,当电场强度大于164 kV/cm时,厚膜在室温下已处于铁电态。
（Pb,La）（Zr, Ti）O3 antiferroelectric thick films （about 2.2 μm thick） showing strong （100）-orientation preference were prepared on silicon substrates by sol-gel method. The electric-field-induced phase transition and the temperature-induced phase transition behaviors of the thick films were studied under different temperatures and different electric fields, respectively. The results show that the （Pb, La）（Zr, Ti）O3 antiferroelectric thick films are antiferroelectric （AFE） at room temperature. With the increase in temperature, the critical electric field strength for phase transition of the thick films decreases gradually, while the AFE state of the thick films becomes more and more unstable. When the temperature is above 132 ~C and the electric field strength is 0 kV/cm, the thick films are paraelectric. With the increase of electric field strength, the critical temperature for the AFE-FE phase transition of the thick films shifts to lower value. When the electric field strength is above 164 kV/cm, the thick films are ferroelectric at room temperature.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2012年第3期35-39,共5页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.51175483)
山西省基础研究计划资助项目(No.20100210023-6)
关键词
溶胶–凝胶法
反铁电厚膜
介电性能
相变效应
sol-gel method
antiferroelectric thick film
dielectric properties
phase transition
