摘要
研究了C/SiC复合材料氧化烧蚀机理,发现它们与传统的硅基和碳基材料烧蚀有很大差别。C/SiC的烧蚀取决于氧的分压、表面温度和材料晶态结构及成份,可能出现活性氧化和惰性氧化两种破坏机制。研究了氧化膜的形成和破坏条件,以及氧化膜中氧气的扩散机制,建立了适用于C、Si、SiC和C/SiC(C和SiC可有不同混和比)四种材料烧蚀计算的通用物理数学模型。
The oxidation mechanism of C/SiC composite material were examined in detail.The C/SiC material exhibit two types of oxidation behaviour： active and passive oxidation at high temperature depending on ambient oxygen partial pressures and mass fractions of C and SiC in the C/SiC composite material.The silicon based material has good oxidation resistance due to the formation of a protective silica scale.The conditions under which the protective scale forms and decrease,diffusion of oxygen in the scales,and the growth rates of the scales were investigated thoroughly.General relationships for active and passive oxidation as well as transition between them were derived.
出处
《空气动力学学报》
EI
CSCD
北大核心
2012年第1期34-38,共5页
Acta Aerodynamica Sinica
