摘要
High frequency performance limits of graphene field-effect transistors （FETs） down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance （L） and quantum capacitance （C）, which is about 100 GHz-um divided by the gate length.
晶体管(联邦货物税) 击倒到 20 nm 的隧道长度的 graphene 地效果的高频率表演限制被使用前後一致的量模拟检验了。结果比 3 在 20 nm 的隧道长度弄平的显示尽管克莱因 band-to-band 通道为 sub-100 nm graphene 联邦货物税是重要的，完成好跨导和大的弹道的开关比率是可能的。在 20 nm 的隧道长度，内在的截止频率为各种各样的门绝缘体厚度价值在一些 THz 留下，但是薄门绝缘体面对寄生电容为好跨导和截止频率的更小的降级是必要的。内在的截止频率接近 graphene 给运动电感(L) 和量电容(C) 的 LC 典型频率，哪个是大约 100 GHz 牰灯牥楴獥 ? ю ? ю吗？
