摘要
Variable-temperature transmission/absorption spectra are measured on As-doped Hgl-xCdxTe grown by molec- ular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on VHg （unintentionally）-doped HgCdTe. By referring to the empirical formulas of Eg（x,T）, the x value of the epilayer is calculated and its inconsistency between the extreme temperatures （e.g. 10 and 300 K） is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value （or Eg） in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible （e.g. 10 K）, and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.
Variable-temperature transmission/absorption spectra are measured on As-doped Hgl-xCdxTe grown by molec- ular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on VHg （unintentionally）-doped HgCdTe. By referring to the empirical formulas of Eg（x,T）, the x value of the epilayer is calculated and its inconsistency between the extreme temperatures （e.g. 10 and 300 K） is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value （or Eg） in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible （e.g. 10 K）, and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.
作者
Yue Fang-Yu
Chen Lu
Li Ya-Wei
Sun Lin
Yang Ping-Xiong
Chu Jun-Hao
越方禹;陈璐;李亚巍;孙琳;杨平雄;褚君浩(Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Shanghai 200241,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
基金
Project supported by the National Basic Research Program of China(Grant No.2007CB924901)
the Shanghai Leading Academic Discipline Project,China(Grant No.B411)
the National Natural Science Foundation of China(Grant Nos.60906043,60990312,and 61076060)
the Shanghai Municipal Commission of Science and Technology Project,China(Grant Nos.09ZR1409200,10ZR1409800,and 10JC1404600)
the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20090076120010)
the Fundamental Research Funds for the Central Universities,China(Grant No.09ECNU)
