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应变硅技术在纳米CMOS中的应用 被引量：1

The Application of Strained Silicon in the Nano CMOS Technics
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摘要 应变硅技术具有迁移率高、能带结构可调的优点,且与传统的体硅工艺相兼容,在CMOS工艺中得到广泛地应用,尤其是MOS器件的尺寸进入纳米节点。文章综述了应变硅技术对载流子迁移率影响的机理,并从全局应变和局部应变两个方面介绍了应变硅在CMOS器件中的应用。同时,将多种应变硅技术整合在一起提升MOS器件的性能是未来发展的趋势。 Strained silicon technology, which provided with merits of high mobility, modifiable band-gap, compatible with conventional sub-silicon technics, was widely used in CMOS technics, and especially in the nano-meter node CMOS devices. In this text, the principle of carrier mobility ,which influenced by strain,was Simply summarized, and the application of Global strain and Local strain in the nano CMOS technics was introduced. Meanwhile,multi-strain technics would become the trend of improvement of the nano CMOS devices＇ performance in the future.
作者 刘国柱 姚飞 王树杰 林丽
机构地区 中国电子科技集团公司第 南通航运职业技术学院船舶与海洋工程系
出处 《电子与封装》 2012年第1期31-36,共6页 Electronics & Packaging
关键词 应变硅 CMOS 全局应变 局部应变 Strained silicon CMOS global strain local strain
分类号 TP702 [自动化与计算机技术—检测技术与自动化装置]
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同被引文献22

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电子与封装
2012年 第1期

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