摘要
In this paper,potassium dihydrogen phosphate（KDP） crystals were grown in the presence of a series of silicate（SiO32-） impurity concentrations via conventional temperature cooling and rapid growth methods,respectively.It revealed that the SiO32-impurity could lead to the decrease of transmittance at the region of ultraviolet band for pyramidal sectors and slightly increased the transmittance for prismatic sectors.SiO32-could enter into the crystal lattice and create lattice defects,which consequently increased the density of light scatter.The decrease of laser damage threshold was attributed to the lattice defects and the redundant electrons brought by the replacement of SiO32-at the PO43-position.
In this paper,potassium dihydrogen phosphate（KDP） crystals were grown in the presence of a series of silicate（SiO32-） impurity concentrations via conventional temperature cooling and rapid growth methods,respectively.It revealed that the SiO32-impurity could lead to the decrease of transmittance at the region of ultraviolet band for pyramidal sectors and slightly increased the transmittance for prismatic sectors.SiO32-could enter into the crystal lattice and create lattice defects,which consequently increased the density of light scatter.The decrease of laser damage threshold was attributed to the lattice defects and the redundant electrons brought by the replacement of SiO32-at the PO43-position.
基金
supported by the National Natural Science Foundation of China (No. 50721002)
