摘要
1.3和1.5μm波长低密度自组织双层量子点被期望首先用在在单个光子光纤传输中,这种结构是基于由一薄层GaAs隔离的双层InAs量子点实现的,由于应变场的存在,第一层量子点为第二层量子点提供了一个成核区,低温生长的双层InAs量子点发光主要来自于顶层量子点,顶层量子点发光波长会向长波长移动。在本论文中,利用低密度InAs量子点作为获得长波长双层InAs的种子层,实验制备的双层InAs量子点,波长约为1.4μm。
1.3 or 1.55[μ]m low density self-assembled bilayrer quantum dots（QDs） on GaAs has been focused first on as single-photon emitters.The structure was based on two closely spaced QD layers separated by a thin GaAs spacer layer.The first layer of QDs created a strain field which extends through the spacer layer,and provided nucleation sites for the second layer QDs.By growing the second layer of QDs at a low growth temperature,a long wavelength emission can be achieved.In this work,we preliminarily show that,by using a low-density InAs QD layer as a template,it is the foundation to obtain long-wavelength low-density InAs bilayer quantum dots（BQDs）,benefiting from the low density of the QDs,1.4[μ]m emission from BQDs in the long wavelength was demonstrated.
出处
《长春理工大学学报（自然科学版）》
2011年第4期6-8,共3页
Journal of Changchun University of Science and Technology(Natural Science Edition)
基金
国家自然科学基金项目(61009039
60976056)
吉林省科技厅资助项目(201101100)
长春理工大学创新基金
关键词
位置可控
低密度
量子点
position-controllable
low-density
quantum dots
