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应用于OFDM之3.1~8.0GHz超宽带接收机前端芯片设计 被引量:1

Design of A 3.1—8.0 GHz UWB Receiver Front-end Chip for OFDM Applications
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摘要 使用TSMC 0.18μm CMOS工艺实现3.1~8.0GHz超宽带接收机前端电路芯片设计,并利用ADS软件进行仿真、电路参数调整。电路架构包括:单端输入差动输出之超宽带低噪声放大器、Balun(Balance-unbalance)以及差动输入/输出的超宽带降频混频器,主要特点是在低噪声放大器输出端和混频器之间加入Balun,提升电路性能并减少芯片面积。芯片测试结果:在供给电压1.8V下,频宽为3.1~8.0GHz,S11<-15.3dB,转换增益为24.6dB,功率消耗为37.98mW。包含接脚,芯片面积0.985(0.897×1.098)mm2。 A receiver front-end chip for ultra-wide band systems operating in 3.1-8.0 GHz frequency range was designed and successfully fabricated by TSMC 0. 18 μm CMOS process. All the circuits were simulated and tuned by simulator ADS (advanced design system). The proposed chip uses the passive Balun to achieve the conversion between LNA and mixer and, the LNA uses the transformer as input matching to achieve low chip area and high performance. The measured results show that at the supply voltage of 1.8 V, the proposed chip is tunable from 3.1 to 8.0 GHz and obtains S, less than -15.3 dB,conversion gain (CGmax) of 24.6 dB and power consumption of 37.98 mW. Including pads,the total chip area is 0. 985 (0. 897× 1. 098) mm2.
出处 《山东科技大学学报(自然科学版)》 CAS 2011年第6期73-79,84,共8页 Journal of Shandong University of Science and Technology(Natural Science)
关键词 超宽带 前端电路 低噪声放大器 混频器 ultra-wide band, front-end circuit low-noise amplifier mixer
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参考文献11

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