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基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究

Dry Etching of InP Material Based on Inductivity Coupled Plasma
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摘要 研究了基于电感耦合等离子体(ICP)刻蚀系统的InP基半导体材料的干法刻蚀。采用Cl2/Ar/H2混合刻蚀气体,分别研究了氯气体积分数和ICP功率与刻蚀速率之间的关系,及镍、二氧化硅和二者结合型掩膜版的适用范围。获得有效的刻蚀速率为450～1 200 nm/min,InP对金属镍的选择性刻蚀比值为175～190。掩膜版的选择与制备方法适用于基于ICP系统的任何半导体材料的干法刻蚀工艺。 Dry etching of InP material based on inductivity coupled plasma（ICP） was thoroughly studied,Cl2/Ar/H2 gas mixture was adopted,and the etching depth could reach 10 μm with a vertical and a smooth surface.The gas percentages of the total gas versus etching rate,and the applicable regions of Ni,SiO2,and the combination of Ni and SiO2 were studied,respectively.The regions of the effective etching rate and selectivity against Ni are 450~1 200 nm/min and 175~190,respectively.The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system.
作者 王琪 张金龙 王立军 刘云
机构地区 中国科学院激发态重点实验室长春光学精密机械与物理研究所 中国科学院研究生院
出处 《发光学报》 EI CAS CSCD 北大核心 2011年第12期1276-1280,共5页 Chinese Journal of Luminescence
基金 国家自然科学基金(61106047 61176045 61106068 51172225) 国家自然科学基金重点项目(90923037)资助项目
关键词 固体掩膜版 电感耦合等离子体 INP 干法刻蚀 hard mask inductivity coupled plasma InP dry etching
分类号 TN248.4 [电子电信—物理电子学]
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参考文献11

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  • 2Sun C Z, Zhou Q W, Xiong B, et al. Vertical and smooth etching of InP by Cl2/Ar/CH4 inductively coupled plasma at room temperature [J]. Chin. Phys. Lett. , 2003, 20(8) :1312-1314.
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发光学报
2011年 第12期

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