摘要
设计了一种带新型背景抑制技术的红外读出电路,该电路通过控制开关管的导通与关断,使背景抑制电流源在积分过程中间断性地产生背景抑制电流。同时,背景抑制电流产生管工作在强反型区,减小了由工艺失配和噪声所引起的单元电路间背景抑制电流的变化,降低了电路的背景抑制非均匀性。所提出的读出电路基于CSMC DPTM(双晶三铝)0.5μm CMOS工艺进行了流片,测试结果表明:该读出电路的背景抑制非均匀性为1.23%,线性度为98.88%,背景电流为90.36 nA,最大信号电流为5.52 nA时,最大信噪比为63.24 dB。
An infrared readout circuit with novel background suppression technique was proposed. By closing and opening the switch transistor, the background suppression current source can generate discontinious background sup- pression current. And when the switch transistor is closed, the other two transistors operate in strong inversion region, which reduces the background suppression current spatial variations over the cell array caused by process mismatches （particularly threshold voltage variations ）and noise. Therefore, the background suppression non- uniformity of the readout circuit becomes lower. The proposed readout circuit has been fabricated in a standard 0. 5 μm Double Poly Triple Metal （DPTM） n-well CMOS process. The measure results show that the background suppression non-uniformity of the chip is 1.23% ,and the circuit linearity is 98.88%. With 90.36 nA background current, the maximum signal current is 5.52 nA and the peak signal-to-noise ratio of the circuit is 63.24 dB.
出处
《电子器件》
CAS
2011年第6期653-658,共6页
Chinese Journal of Electron Devices
基金
中国科学院红外成像材料与器件重点研究室开放课题(IIMDKFJJ-09-01)
航空科学基金(20090169003)
