摘要
利用PECVD在硅片上沉积SiNx:H薄膜,研究硅烷氨气流量比对SiNx:H薄膜的组分、折射率和钝化效果的影响。X射线光电子能谱(XPS)和椭偏仪的测试结果表明,硅烷氨气流量比(SAR)在0.09～0.38以内沉积的所有薄膜都呈现出富硅的组分,而且随着SAR的逐渐增加,Si的含量逐渐增加,折射率逐渐增大。微波光电导衰退(μ-PCD)的测试结果表明,Si含量适中(也即折射率适中)的薄膜,相比Si含量过低或过高的薄膜,呈现出更为稳定的钝化效果。
SiNx：H thin films were deposited onto silicon wafers using a PECVD, and effect of silanc-ammonia flow ratio （SAR） on composition, refractivity, and passivation property of the thin films were investigated. Results of X-ray photoelectron spectroscopy （XPS） and ellipsometry show that, all the as-deposited thin films are Si-rich within SA R 0.09 - 0.38, and Si content and refractivity of the thin films increase with SAR. Microwave photoconduction decay （g-PCD） results show that, thin films with moderate Si contents （also moderate refractivity） exhibit more stable passivation properties, comparing with thin films of lower or higher Si contents.
基金
江苏省科技基础设施建设计划项目(BM2009611)
江苏省自然科学基金项目(BK2009620)
