摘要
提出了一种基于物理的MOS电容超薄氧化层量子隧穿解析模型,量子力学效应在应用奇异微扰法求解密度梯度方程时得以体现。将泊松方程和经量子修正的电子势方程同时求解,得出电子和静电势在垂直于沟道方向的分布。结果反映出量子效应明显不同于经典物理学的预测。对解析解结果和精确的数值模拟进行比较,结果表明,在栅极偏压和氧化层厚度的较大变化范围内,二者都能很好地吻合。
A physics-based analytical model for quantum tunneling through ultra-thin oxide in MOS capacitor was developed.Quantum mechanical effects were demonstrated by solving density gradient equations with singular perturbation method.By simultaneously solving Poisson＇s equation and quantum-corrected electron potential equation,electron and electrostatic potential distributions perpendicular to the channel were obtained.Results captured the features of quantum effects and were shown to be quite different from what the classical physics predicts.Comparison between results predicted by analytical model and those from numerical simulation showed good agreement over a broad range of gate biases and oxide thickness.
出处
《微电子学》
CAS
CSCD
北大核心
2011年第6期894-896,共3页
Microelectronics
基金
国家重点基础研究发展(973)计划基金资助项目:纳米尺度硅集成电路器件与工艺基础研究(2006CB302705)
超低功耗高性能集成电路器件与工艺基础研究(2011CBA00604)
关键词
量子隧穿
解析模型
密度梯度方程
奇异微扰法
Quantum tunneling
Analytical model
Density gradient equation
Singular perturbation method
