摘要
提出了一种适合低电源电压应用的新型MOS自举采样开关电路。通过"复制"自举电容和采样开关作为电荷损耗检测电路,并将检测出的电压降低值重新加到自举电容上,解决了传统MOS自举采样开关在低电源电压下工作时的电荷分享问题。基于0.18μm标准CMOS工艺,对电路进行了仿真。结果显示,在输入频率为60MHz、峰-峰值为1V、采样频率为125MHz时,与传统自举采样电路相比,新型自举采样电路采样开关管具有更低的导通电阻,无杂散动态范围(SFDR)提高了8dB,特别适合在低压高速A/D转换器中使用。
A novel MOS bootstrapped sampling switch suitable for low supply voltage application was proposed.In this circuit,a duplicate sampling circuit,which estimated the charge loss and added it in series to bootstrap capacitor,was used to solve charge sharing problem subjected to conventional bootstrapped sampling switch operating at low voltage supply.The circuit was simulated based on 0.18 μm standard CMOS process.Simulation results showed that,compared with the conventional bootstrapped switch,the proposed circuit reduced on-resistance of the sampling switch and improved spurious free dynamic range(SFDR) by 8 dB for 60 MHz and 1 V(VP-P) input signal at 125 MS/s sampling rate.This method is especially useful for low-voltage and high-speed A/D converters.
出处
《微电子学》
CAS
CSCD
北大核心
2011年第6期794-798,共5页
Microelectronics