摘要
采用溶胶-凝胶法,通过改变硝酸银与醋酸锌的物质的量比分别在Si,ITO和玻璃基片上制备出不同Ag掺杂浓度的ZnO薄膜.利用X射线衍射仪、扫描电子显微镜、紫外可见光分光光度计、伏安特性曲线等测试手段,表征了薄膜的结晶状况、表面形貌及光电特性等.结果表明:随Ag元素的引入及掺杂浓度的升高,ZnO薄膜中有Ag单质生成,并在波长404 nm处出现了由Ag单质颗粒引起的共振吸收峰,同时ZnO薄膜的导电性得到了明显改善,在可见光范围内薄膜透光率均在85%以上.Ag掺杂原子数分数为7%时,薄膜导电性最好,其在可见光范围内透光率高达90%.
Ag-doped ZnO thin films were fabricated on silicon substrate with different Ag doping concentrations by sol-gel method.The samples were characterized by X-ray diffraction,scanning electron microscopy,ultraviolet-visible spectrophotometer and current-voltage measurement,respectively.The effects of Ag doping on the structure,surface topography and electrical properties of ZnO thin films were investigated.The results showed that the elemental Ag is generated in ZnO thin films with the addition of Ag and the increasing of the doping concentration,and a new absorption peak appears at 404 nm,which is probably induced by the formation of Ag nano-particles.At the same time,the conductivity of Ag-doped ZnO thin films is obviously improved and the film transmittance in the visible region is all above 85%.When the doping concentration is 7at%,the sample shows the best conductivity with visible transmittance greater than 90%.
出处
《东北大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2011年第12期1753-1756,共4页
Journal of Northeastern University(Natural Science)
基金
教育部留学回国人员科研启动基金资助项目(20091341-4)
教育部高等学校博士学科点专项科研基金资助项目(20100042120023)
中央高校基本科研业务费专项资金资助项目(N090403001)
