摘要
采用RBS分析方法,研究了宽温区(LNT—400℃)下Xe^(2+)离子束诱导引起的金属/硅界面反应,得到多种硅化物单相或双相生长层,讨论了化学驱动力和辐射增强扩散效应。
The ion beam induced atomic mixing and interface reaction between a metalthin film (Ni, Nb, Mo, Ti, Cu) and its silicon substrate is investigated by RBSfor 300 keV Xe^(2+) ions, dose with 5×10^(15) cm^(-2) and an implantation temperaturefrom LNT to 400℃ Many Crystal silicide phases including one phase or two pha-ses are formed. The phase growth is layer by layer. The results are discussed interms of chemical driving force and radiation enhanced diffusion effect.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
1990年第5期35-38,共4页
Atomic Energy Science and Technology
基金
国家自然科学基金
关键词
离子束
金属-硅体系
界面
反应
Xe^(2+) ion
Metal/silicon system
Interface reaction induced by ion beam
