摘要
为了比较不同热处理方式及工艺对TiN薄膜结构和性能的影响,在真空条件下、300～900℃范围内,对采用非平衡磁控溅射方法在单晶硅基底上沉积TiN薄膜后进行了热处理实验,考查了热处理模式(不同升温速率)和温度对薄膜结构和性能的影响.利用X射线衍射仪(XRD)对薄膜微结构进行表征,并利用扫描电镜观察了不同热处理模式下薄膜的表面形貌.同时,对不同工艺下薄膜的硬度、表面粗糙度和电阻率进行了表征.结果表明,薄膜经过热处理后,其晶体结构、择优取向、硬度、粗糙度和电阻率发生明显变化,并且随着热处理模式和温度的不同而产生较大差异.无论哪种模式,真空热处理后TiN薄膜的硬度均有所下降,其表面粗糙度亦有相似的变化趋势.两种模式下,经过450℃热处理后薄膜的硬度和粗糙度均达到最大值,与其高度择优取向的晶体结构有明显的相关性.
TiN thin films were deposited on Si wafers using an unbalanced magnetron （UBM） sputtering technique and then annealed in vacuum by using rapid and slow thermal processing at temperatures ranging from 300 to 900 ℃. The microstructure and surface morphology of the thin films at various processing parameters were characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The variation of the hardness, surface roughness and electric resistivity over the course of annealing treatment temperature at two thermal processing was investigated respectively. The results showed that the hardness of TiN films decreased after heat treatment in the vacuum, while surface roughness increased significantly, but decreased after slow heat treatment at temperature above 700 ℃. Moreover, the maximum values of hardness and roughness could be observed in films annealed at 450 ℃ in comparison to those at other annealing temperatures,which is closely related to its preferential orientation of crystals in TiN films.
出处
《西安工业大学学报》
CAS
2011年第5期418-423,共6页
Journal of Xi’an Technological University
基金
陕西省科技厅项目(2010KW-07)
关键词
非平衡磁控溅射
TIN薄膜
热处理
晶体结构
unbalanced magnetron supttering
TiN film
heat treatment
microstructure
