摘要
介绍了三类常见的低k介质材料,并对空气隙(k=1)的发展进行了探讨;讨论了引起等离子体损伤的机理和传统的O2等离子体去胶工艺面临的困难;最后综述了近年来国际上提出的低损伤等离子体去胶工艺的研究进展。人们已经开发出一些对低k材料进行硅化处理的工艺,可以部分修复在刻蚀和去胶处理过程中被消耗掉的有机官能团。基于金属硬掩膜层和新型等离子体化学的集成方案将会展示出颇具前景的结果。
Three kinds of common low-k dielectric materials are introduced,and the progress of the air-gap（k=1） is discussed.The mechanism of plasma damage and the difficulties of the conventional O_2 plasma stripping process are briefly discussed.Finally,the research progresses of the low-damage plasma stripping process in the world recently are summarized.Some siliconizing processes of low-k materials are developed to partially restore the organic functional groups consumed in the etching and stripping process.The integration scheme based on metal hard mask（MHM） and novel plasma stripping process will show a promising result.
出处
《微纳电子技术》
CAS
北大核心
2011年第11期733-738,共6页
Micronanoelectronic Technology
基金
国家科技02重大专项基金资助项目(2009ZX0203008)
