摘要
沟槽VDMOS产品为满足电性能力要求,源极区域必须与p型体区短接,为了达到此目的,传统的做法是,源极需要进行一次光刻,在p型体区中做出阻挡源区注入的胶块,然后再进行源区注入。提出几种其他的制作方式,可以省去源区光刻,但同样可以达到原来的目的。诸如,通过刻蚀Si孔将源区与p型体区短接;或者利用刻蚀出的沟槽侧壁做屏蔽进行源区注入;利用凸出沟槽的多晶硅做屏蔽进行源区注入。这些办法都可简化工艺流程,缩短制造周期,节约制造成本,增强器件可靠性,提高产品的竞争力。
To satisfy the electric property of trench VDMOS products, it is necessary to connect SRC area with body area. Traditionally, for this purpose, photolithography on SRC layer is needed, that is, PR is made in the body area first, and then SRC area ion is implanted. Several other manufacturing methods that photolithography on SRC layer can be cancelled to reach its original aim were introduced, such as, connecting SRC with body via etching silicon-cont, implanting ion of SRC by the shield of etched trench sidewall or by the shield of poly over the trench. All of these methods can simplify process flow, shorten cycle time of manufacturing, save manufacturing cost, enhance reliability of devices and promote competitation of products.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第11期840-843,856,共5页
Semiconductor Technology
