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Research on single event transient pulse quenching effect in 90 nm CMOS technology 被引量:14

Research on single event transient pulse quenching effect in 90 nm CMOS technology
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摘要 Since single event transient pulse quenching can reduce the SET(single event transient) pulsewidths effectively,the charge collected by passive device should be maximized in order to minimize the propagated SET.From the perspective of the layout and circuit design,the SET pulsewidths can be greatly inhibited by minimizing the layout spacing and signal propagation delay,which sheds new light on the radiation-hardened ICs(integrated circuits) design.Studies show that the SET pulsewidths of propagation are not in direct proportion to the LET(linear energy transfer) of incident particles,thus the defining of the LET threshold should be noted when SET/SEU(single event upset) occurs for the radiation-hardened design.The capability of anti-radiation meets the demand when LET is high but some soft errors may occur when LET is low.Therefore,radiation experiments should be focused on evaluating the LET that demonstrates the worst response to the circuit.
出处 《Science China(Technological Sciences)》 SCIE EI CAS 2011年第11期3064-3069,共6页 中国科学(技术科学英文版)
基金 supported by the National Natural Science Foundation of China (Grant Nos. 60836004 and 61006070)
关键词 SET propagation radiation hardening by design charge collection charge share QUENCHING 瞬态脉冲 淬火效果 单事件 CMOS技术 抗辐射能力 电路设计 纳米 传播延迟
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同被引文献31

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