摘要
用沟道技术测量给出了 N^+和 Bi^+轰击 InP 单晶的晶格损伤,计算了碰撞截面.该截面值与离子种类和离子的束流密度密切相关.利用碰撞理论推导出沟道背散射谱退道的最小产额与晶格损伤率的关系式,并分析了离子注入损伤过程及双元化合物 InP 离子轰击晶格损伤模型.
Lattice damage of Bi^+ and N^+ implanted into InP is measured by RBS and channelling techniqure.And the collision cross-section of the ions in InP are calculated.The collision cross-section are related to ions species and flux. The relation of dechannelling minimum x_m of channelling backscattering spectrometry to lattice damage ratio is given using collision theory.The lat- tice damage processes are analysed using the data.Finally,the lattice dama- age model of binary compound InP is discussed.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1989年第3期26-32,共7页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金
关键词
离子注入
晶格
损伤
lattice damage model, ion implantation in InP, RBS and channelling techniqure, collision cross-section, dechannelling minimum x_m
