摘要
提出了一种新型的基于硅微桥的MEMS温度传感器。传感器是由表面制有惠斯通电桥的硅微桥和淀积在其表面的温敏聚合物薄膜构成。应用弹性力学薄板理论分析了该温度传感器的模型。分析表明:硅微桥的输出与温度变化呈线性关系。在温敏薄膜材料参数已知时,采用大面积、高厚度,可以改善传感器性能。
A novel MEMS temperature sensor employing a hi-layer film structure is presented. The sensing unit is composed of a silicon micro-bridge embedded with a piezoresistive Wheatstone bridge and a temperature sensitive polymer film. Model analysis of the temperature sensor using elastic mechanics theory is presented. Analysis shows that the output of the silicon micro-bridge is linear with temperature. Larger area and thicker thickness can improve the performance when the polymer film material parameters are known.
出处
《传感器与微系统》
CSCD
北大核心
2011年第9期149-152,共4页
Transducer and Microsystem Technologies
基金
国家自然科学基金资助项目(60871024)
国家重点实验室开放课题(KFJJ200915)
