期刊文献+

不同周期数GDC/YSZ多层电解质薄膜的电学性能与结构稳定性

Electrical properties and structural stabilities of GDC/YSZ electrolyte multilayer with different number of modulation period
在线阅读 下载PDF
导出
摘要 利用反应磁控溅射方法在蓝宝石单晶衬底上制备了调制周期相同、周期数不同的GDC/YSZ纳米多层薄膜,采用X射线衍射、原子力显微镜对薄膜结构、粗糙度、生长形貌进行了表征,利用交流阻抗谱仪测试了多层薄膜不同温度下的电学性能。结果表明衬底上首层薄膜是整个多层膜的生长模板,首先沉积GDC时多层膜呈无规则生长而首先沉积YSZ时多层膜为(111)织构;GDC/YSZ多层膜的生长是一个逐渐粗糙化的过程,随着薄膜厚度的增大(周期数的增多),多层膜粗糙度与晶粒尺寸增大;随着周期数的增多,多层膜电导率逐渐增大,但电导活化能基本保持不变(约1.3eV);在500~800℃下退火,多层膜结构稳定,但由于薄膜晶粒长大,导致其电导率小幅降低(降低百分比<5%)。 GDC/YSZ electrolyte multilayers with the same modulation period and different period number had been synthesized on sapphire singe crystal substrate by reactive magnetron sputtering.Their structure,growth morphologies and electrical properties have been characterized by X-ray diffraction,atomic force microscopy and ac impedance measurement respectively.The results indicate that,the first layer on the substrate acts as a growth template for the multilayer;the first layer of GDC and YSZ results in random growth and(111) textures for the multilayers respectively.The multilayers undergo a roughing growth process leading to increasing on roughness and grain sizes with increase in thickness.Electrical conductivities of the multilayers increase with more modulation periods(i.e.interfaces),while their activation energies remain almost the same(about 1.3eV).After sintered at 500-800℃,the GDC/YSZ multilayer proves to be structural stable,and its conductivities decrease slightly(decrease ratio 5%) probably due to increase of grain sizes during sintering.
出处 《功能材料》 EI CAS CSCD 北大核心 2011年第9期1708-1711,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50502010)
关键词 GDC/YSZ多层薄膜 周期数 生长形貌 电学性能 结构稳定性 GDC/YSZ multilayers number of modulation period growth morphologies electrical properties structural stabilities
  • 相关文献

参考文献3

二级参考文献32

  • 1郝斌魁,姜雪宁,张庆瑜,陈充林.基片温度对反应射频磁控溅射法制备掺杂CeO2电解质薄膜的影响[J].真空科学与技术学报,2006,26(z1):134-139. 被引量:2
  • 2Adler S B. [J]. Chem Rev, 2004, 104: 4791-4843.
  • 3Will J, Mitterdorfer A, Kleinlogel C, et al. [J]. Solid State Ionics, 2000,131 : 79-96.
  • 4Chan S H, Chen X J,Khor K A. [J]. Solid State Ionics, 2003,158 : 29-43.
  • 5Chen L, Chen C L, Chen X,et al. [J]. Appl Phys Lett, 2003, 83(23) :4737-4739.
  • 6Sata N, Eberman K, Eberl K, et al. [J]. Nature, 2000, 408 : 946-949.
  • 7Lin Y, Wu Z, Chen X, et al. [J].IEEE Transactions on Applied Superconductivity, 2003, 13(2): 2825-2828.
  • 8Kim C S,Qadri B,Twigg M,et al. [J]. J Vac Sci Technol A,1990, 8: 3466-3469.
  • 9Peters A, Korte C, Hesse D,et al. [J]. Solid State Ionics, 2007, 178: 67-76.
  • 10Goodenough J B. [J]. Annu Rev Mater Res, 2003, 33: 91-128.

共引文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部