摘要
采用化学水浴以CdCl2.H2O、CS(NH2)2、NH4Cl、NH3.H2O和去离子水作为反应前驱物制备CdS纳米晶薄膜。采用扫描电镜(SEM)、X射线衍射(XRD)、透射光谱和稳态荧光光谱,研究了反应前驱物中不同的n(S)∶n(Cd)对所制备的CdS薄膜的形貌、结构和光学性能的影响。结果表明:反应前驱物中n(S)∶n(Cd)≥3∶1时均能制备出由纳米颗粒组成的、具有立方晶系结构的CdS薄膜;CdS薄膜均为富镉的n型半导体,薄膜中的S/Cd原子比约为0.9∶1;CdS薄膜的吸收边在450 nm左右,在510～2 500 nm范围内透射率均在70%以上,在500 nm处有一较强的发光峰。
CdS thin film was prepared by chemical bath deposition at different n（S）∶n（Cd） using the precursors of CdCl2·H2O,CS（NH2）2,NH4Cl,NH3·H2O and deionized water.The surface morphology,structure and optical properties of all the samples have been analyzed by scanning electron microscopy,X-ray diffraction,transmission and photoluminescence（PL） spectra.The results indicated that spherical particle like morphology and cubic structure CdS thin films were obtained at n（S）∶n（Cd） greater than or equal 3∶1.All CdS thin films with a close stoichiomerty S/Cd=0.91 were Cd-rich belong to n-type semiconductor.The absorption edge of CdS films was about 450 nm,the optical transmittance was more than 70% in the wavelength range from 510 to 2 500 nm.Intensity of the photoluminescence peak at 500 nm is stronger.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2011年第8期793-797,共5页
Chinese Journal of Luminescence
基金
广东省科技计划项目(2008B010800004)资助项目
