摘要
采用微带结构研制出三毫米波段二次谐波混频器.该混频器核心器件采用型号为MS8251的GaAs梁式引线肖特基势垒二极管对.根据二次谐波混频器对本振、射频和中频网络的要求,先用谐波平衡法分析出反向并联二极管对在本振信号单独激励下的大信号阻抗,由此设计出本振网络;然后模拟出该器件在大信号本振激励下的小信号射频输入阻抗,并由此设计出射频网络.还设计了三毫米波波导到微带过渡转换,整个电路设计和安装在介电常数为2.22,厚度为0.127 mm的RT/Duroid 5880基片上.当本振频率为46.3 GHz时,该混频器射频输入90～95 GHz,实测带内变频损耗小于15 dB.
A sub-harmonic mixer is presented with micro-strip at 3 mm wave length.The key device of the mixer is a pair of GaAs beam lead anti-parallel Schottky diode（type MS8251）.According to the request of the local oscillator（LO）,radio frequency（RF） and intermediate frequency（IF） networks of sub-harmonic mixer,the large signal impedance of anti-parallel diode pair,which is stimulated with the LO signal alone,is simulated by harmonic balance method firstly.The LO network is designed based on the result above.Then the small signal impedance of anti-parallel diode pair with LO stimulation is simulated and the RF network is designed.A 3 mm waveguide to micro-strip translation is also designed in the paper,and the sub-harmonic mixer is fabricated on the RF-Duroid 5880 with 0.127 mm thick and dielectric constant εr of 2.22.According to the measurement result,the conversion loss which is lower than 15 dB is achieved with the RF ranged from 90 GHz to 95 GHz and the LO frequency of 46.3 GHz.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第4期343-346,349,共5页
Journal of Infrared and Millimeter Waves
基金
国家自然科学创新群体基金(60921063)
毫米波国家重点实验室创新基金(Z200913)
