摘要
应用计算机数值模拟方法计算ｐ＋ （μｃ－Ｓｉ∶Ｈ） ／ｎ （ｃ－Ｓｉ） 及ｐ＋ （μｃ－Ｓｉ∶Ｈ） ／ｉ （ａ－Ｓｉ∶Ｈ） ／ｎ （ｃ－Ｓｉ） 异质结太阳能电池中的电场强度分布， 说明μｃ－Ｓｉ／ｃ－Ｓｉ异质结电池制造中μｃ－Ｓｉ∶Ｈ 膜厚选择，进而对嵌入ａ－Ｓｉ∶Ｈ 薄层的μｃ－Ｓｉ／ｃ－Ｓｉ异质结太阳能电池设计进行分析， 包括ａ－Ｓｉ∶Ｈ 薄层ｐ 型掺杂效应及本底单晶硅的电阻率选择，
By means of a computer simulation method,the electric field distribution of p +(μc Si∶H)/n(c Si)and p +(μc Si∶H)/i(a Si∶H)/n(c Si)heterojunction solar cells at thermodynamic equilibrium is presented.From these results,the optimum thickness of μc Si∶H films in the manufacture of μc Si/c Si heterojunction solar cells and design of μc Si/c Si heterojunction solar cells inserted with a Si∶H thin layer are analysed.The effect of p type dopping in a Si∶H thin layer and of the different n(c Si)resistivities on the photogenerated carrier transport in the solar cells are discussed.Also,the stability of μc Si/c Si heterojunction solar cells is discussed as well.
出处
《半导体技术》
CAS
CSCD
北大核心
1999年第6期15-19,共5页
Semiconductor Technology
基金
国家自然科学基金
安徽省自然科学基金
关键词
热平衡态
异质结
太阳电池
μc-Si:H
数值模拟
Heterojunction solar cell Newton Raphson solution technique Distribution of the gap states in μc -Si∶H Carrier collection
