摘要
最近,用高温超导单晶Bi2Sr2CaCu2O8+x制备本征结器件从而实现太赫兹辐射源的研究有较大突破,而本征结器件的样品制作仍需细致而深入的研究.为此我们首先借助于单晶硅,制作了矩形的高台(mesa)结构,观测了在不同离子加速电压和不同离子束入射角度下,氩离子铣的刻蚀速度和刻蚀形成台阶侧壁的形貌,给出了一种刻蚀速率高、台阶侧壁陡峭、对样品损伤小的刻蚀方案,用此方法加工出的高温超导本征结器件在一定条件下可以得到太赫兹辐射信号.
Although terahertz （THz） emission has been recently reported in high temperature superconductor Bi2Sr2CaCu2O8＋x intrinsic Josephson junctions （IJJs）, fabrication technique, especially the influence of argon ion milling, has yet to be further investigated. In this work, the fabrication process was systematically tested with silicon single crystals under various accelerating voltages and incident beam angles. The optimum conditions, under which silicon mesas can be fabricated with high etching rate, sharp step-profile and slight damage, were obtained and then applied to fabricating Bi2Sr2CaCu2O8＋x IJJs. These samples can emit THz signal successfully.
出处
《科学通报》
EI
CAS
CSCD
北大核心
2011年第21期1696-1702,共7页
Chinese Science Bulletin
基金
国家重点基础研究发展计划(2011CBA00107)
高等学校博士点基金(20090091110039)
中央高校基本科研业务费专项资金(1092021006)资助
关键词
氩离子铣
高温超导本征结
太赫兹辐射
argon ion milling, high temperature superconducting intrinsic Josephson junctions, THz-emission
