摘要
为了获得等离子体抛光实验平台中氩等离子体的参数,利用Langmuir单探针与发射光谱法对其进行诊断分析,根据Langmuir探针原理计算了氩等离子体的电子温度与电子密度,采用双谱线相对强度法估算了氩等离子体温度及电子密度.实验结果表明:当射频电源功率在40～120 W时,电子温度随射频电源功率增加而增加,电子温度范围为2.41～5.03eV,等离子体温度随射频电源功率变化不大;两种方法测得的电子密度存在偏差,其随射频电源功率变化的趋势是一致的.
The Langmuir probe and optical emission spectroscopy（OES） were used to analyze the characteristics of the argon plasma generated in the plasma polishing apparatus.The electron temperature and electron density of the argon plasma were calculated according to the results measured by Langmuir probe and using bispectral analysis respectively.The result shows that when the RF power changed from 40 W to 120 W,the electron temperature increased with the increment of RF power,ranging from 2.41 eV to 5.03 eV.The plasma temperature changed little with variant RF power.The electron density calculated using OES deviated slightly from that by the Langmuir probe diagnosis,but with the same changing trend.
出处
《西安工业大学学报》
CAS
2011年第3期205-209,278,共6页
Journal of Xi’an Technological University
