摘要
本文中报道优质SnO_2:F透明导电薄膜的制备方法,通过对薄膜透射率和电导(方块电阻)的测量分析,研究薄膜特性与工艺条件的关系,探讨最佳工艺条件和薄膜形成规律。提出一种SnO_2:F 晶体缺陷结构模型,可以较好解释电导随 F掺杂浓度的变化结果。
This paper reports preparation method of quality Sn02:F transparent conducting thin films. Base on the measures and analyses of the transmittance and sheet resistivity of Sn02:F films, we study relations between the properties and technological conditions of the films, explore the optimal technological conditions and formed law of the films. We have put forward a structural motel of defects in Sn02:F crystal which can fine explain changes of conductance with the concentration of fluorine dopant.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1990年第5期525-528,共4页
Journal of Xiamen University：Natural Science
关键词
SnO2:F
导电
薄膜
物理特性
透明
Sn02:F transparent conducting films. Spray pyrolysis method, Sheet resistivity
