摘要
为了研究沉积条件对氢化锂薄膜沉积速率和表面形貌的影响,采用脉冲激光沉积方法在Si(100)基片上沉积了氢化锂薄膜。通过改变靶基距和氢压等手段来控制薄膜的沉积速率,得到了氢压与沉积速率和薄膜表面质量的关系。结果表明,随着氢压和靶基距的增加,氢化锂薄膜的沉积速率逐渐下降;适当增加氢压可以降低氢化锂薄膜的表面粗糙度。从薄膜生长机理出发,探讨了表面粗糙度与氢压的关系,发现理论与实验值的拟合结果非常接近。
In order to study effect of deposition conditions on morphology and deposition velocity of LiH films, LiH films were prepared on Si（ 100 ） substrate by means of pulsed laser deposition. The deposition velocity of LiH films were controlled by changing the substrate-target distance and hydrogen pressure. The relations among hydrogen pressure, deposition velocity and surface quality of the films were obtained. The results showed that the deposition velocity of LiH films decreased with hydrogen pressure and substrate-target distance increasing, moreover, the surface roughness can be reduced by increasing the hydrogen pressure to a certain degree. The relation between surface roughness and hydrogen pressure was discussed based on the growth mechanism of films. The theoretical values are in good agreement with experimental values.
出处
《激光技术》
CAS
CSCD
北大核心
2011年第4期535-538,共4页
Laser Technology
基金
国家八六三高技术研究发展计划资助项目
西华师范大学博士科研启动资金资助项目(10B014)
关键词
薄膜
沉积条件
沉积速率
表面形貌
脉冲激光沉积
thin films
deposition condition
deposition velocity
surface morphology
pulsed laser deposition
