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一个简单的量子阱激光器等效电路模型 被引量:2

A Simple Equivalent Circuit Model of QWLD
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摘要 给出一个新的量子阱激光器等效电路模型,由量子阱激光器单模速率方程推导得到并在电路模拟程序SPICE中完成。该模型考虑了热辐射效应和分离限制区域(SCH)内的载流子工作情况,给出了新的光增益表达式。并利用该模型对单量子阱激光器的小信号特性和瞬态大信号特性进行了预测,模拟结果表明和速率方程的直接求解结果吻合很好。 A simple equivalent circuit model of quantum well laser (QW LD) which is derived by QW rate equations and is accomplished in the circuit simulation program SPICE. In the model, the thermionic emission effect and the carrier transport effects are considered and also the new gain expression is given. With the prediction for the small signal response and the transient large signal response of QW LD, the computer simulation results agree well with the direct numerical analysis of the rate equations.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 1999年第3期314-320,共7页 Research & Progress of SSE
关键词 量子阱激光器 等效电路模型 计算机模拟 激光器 Quantum well Laser Equivalent Circuit Model Computer Simulation
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参考文献2

  • 1Lu M F,IEEE J Quant Electron,1995年,31卷,8期,1418页
  • 2Gao D S,IEEE J Quant Electron,1990年,26卷,7期,1206页

同被引文献11

  • 1[11]Yu S F. Nonlinear dynamics of vertical-cavity surfaceemitting lasers. IEEE J Quantum Electronics, 1999 ;35(3):332~341
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  • 5[2]Riou B, Abraham P, Bjorlin E S, et al. Long wavelength vertical-cavity semiconductor optical amplifier.IEEE J Quantum Electronics, 2001 : 37 (2): 274~ 281
  • 6[3]Bjorlin E S, Dahl A, Piprek J, et al. Vertical-cavity amplifying modulator at 1. 3 μm. IEEE J Photonics Technology Letters, 2001 ; 13 (12): 1 271~ 1 273
  • 7[8]Piprek J, Bjorlin, Bowers J E. Design and analysis of vertical cavity semiconductor optical amplifiers. IEEE J Quantum Electronics,2001;37(1):127~134
  • 8[9]Calvez S, Clark A H, Hopkins J M, et al. 1. 3 μm GalnNAs optically-pumped vertical cavity semiconductor optical amplifier. J Electronics Letters, 2003; 39(1):100~102
  • 9[10]Agrawal G P, Dutta N K. Semiconductor Lasers, New York: Van Nostrand Reinhold, 1993;231~311
  • 10陈维友,汪爱军,张冶金,刘彩霞,刘式墉.行波半导体激光放大器电路模型[J].Journal of Semiconductors,2001,22(3):373-377. 被引量:1

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