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电荷泵电路的分析、设计和提高性能的研究 被引量:5

The Analysis,Design and Performance Research of a Charge Pump Circuit
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摘要 在分析一般电荷泵电路的基础上,提出一种新的电荷泵结构,并对它的工作原理及有关性能进行了详细分析研究。SPICE模拟结果表明,与原来的电路相比,在输出电压为15 V的情况下,电荷泵的上升时间下降了42 % ,负载能力提高了125 % ,为增大EEPROM A charge pump circuit with a new structure is introduced in this paper.The performance of this pump circuit has been studied thoroughly.The simulated results show that the rising time decreases by 42% and driving ability rises by 125% comparing with the initial circuit when the output is 15V,which makes it easier to expand the capacity of EEPROM and to speed up the operation of EEPROM.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 1999年第3期305-313,共9页 Research & Progress of SSE
关键词 电荷泵电路 集成电路 设计 EEPROM Charge Pump Driving Ability Rising Time
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同被引文献33

  • 1刘晓燕,叶青.CMOS电荷泵的结构设计与分析[J].科学技术与工程,2006,6(13):1793-1797. 被引量:3
  • 2刘臻.高性能电荷泵电路设计[J].微计算机信息,2007,23(03Z):302-303. 被引量:5
  • 3Jinrong Qian, Fred C Lee. Voltage-source charge-pump power-factor-correction AC/DC converters. IEEE Trans-actions on Power Electronics, 1999 14 (2).
  • 4Jirtrong Qian, Fred C Lee. Current source charge pump power factor correction electronic ballast. IEEE Power Electronics Conference, 1997 (1).
  • 5Chang-Shiarn Lin, Chern-Lin Chen. Single switch elec-tronic ballast with continuous input current charge pump power-factor-correction. IEEE Transactins on Industrial Electronics, 2000, 47 (6).
  • 6William H Dawes. The ,Design of a Family of High-Current Switches with Over-Current and Over-Temperature Protection [J].IEEE Trans.on Instrumentation and Measurement, 1998 : 1492-1502.
  • 7John F Dickson. On-Chip High-Voltage Generation in NMOS Integrated Circuits Using an Improved Voltage Multiplier technique [J]. IEEE Journal of Sold-State Circuits,1976: 374-378.
  • 8叶强,来新泉,许录平,袁冰,李演明.基于可调电荷泵的双模式高压开关控制器[J].固体电子学研究与进展,2009,29(1):83-88. 被引量:5
  • 9郑淑芳,熊国宣,黄海清,罗刘军,邓敏.铁氧体制备、形貌与性能的关系研究[J].材料导报,2009,23(23):26-29. 被引量:16
  • 10王赞,纵飞,王伟,高超飞,隋恒,喻岩珑.输电线高电位取能电源的研制[J].电网与清洁能源,2010,26(6):23-27. 被引量:18

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