摘要
本文对ＺｎＣｄＳｅ单量子阱中点缺陷附近由非辐射载子复合而激活的点缺陷反应作了研究．样品在不同温度下对荧光光谱随时间变化的测量表明，这种反应增强了辐射量子效率．实验结果与温度相关的点缺陷状态跃迁率模型相吻合，并得到该跃迁的激活能为０．４５ｅｖ．
Point defect reaction activated by nonradiahve carrier recombination at the vicinities of point defects has been studied in a ZnCdSe single quantum well. This reaction enhances rediative qua- ntum efficiency probed by spectrally integrated PL intensity as a function of measurement time at vari- ous sample temperatures. The experimental results are in good agreement with a model that incorporates a temperature dependent point defect state transition rate The activation energy for the state transition is found to be 0. 45eV.
出处
《苏州大学学报（自然科学版）》
CAS
1999年第4期57-60,共4页
Journal of Soochow University(Natural Science Edition)
关键词
ZNCDSE
单量子阱
非辐射载子复合
点缺陷
半导体
single quantum well
point defect reaction
nonradiative carrier recombination
active-tion energy
point defect state transition rate
