摘要
氮氧化硅薄膜综合了ＳｉＯ２膜和Ｓｉ３Ｎ４膜的优点，具有优秀的光电性能，力学性能和稳定性能，已经在光电领域获得了广泛地应用，此外在材料改性方面也有广阔的应用前景。本文综合评述了几种氮氧化硅薄膜的制备方法，比较了各自的优缺点，并指出了今后制备方法的发展趋势。
Silicon oxynitride thin films have many excellent properties of SiO\-2 and Si\-3N\-4 films,such as photoelectric property,mechanical property and stability.It has been used widely in the field of photoelectron and will be used widely in the field of surface modification.The paper reviews a few preparation methods of silicon oxynitride thin films,and compares advantages and disadvantages with each other.On the other hand,it point out the tendency of development.\;
出处
《材料科学与工程》
CSCD
1999年第4期10-13,共4页
Materials Science and Engineering
基金
国家自然科学基金
浙江省自然科学基金
关键词
氮氧化硅
薄膜制备
高温氮化
气相沉积法
silicon oxynitride
thin films
preparation
CVD
PVD
high tempearture nitridation
