摘要
针对目前用于测试LED光电特性多采用接触式的电注入检测方法存在系统复杂、成本高、检测效率低且易造成芯片损伤等不足,提出一种采用光激励和光检测的非接触式检测方法。通过获取光激励LED p-n结产生的光致发光(PL)光谱,在建立了LED PL、电致发光(EL)效应间的确切联系以及LED发光光谱特性与其电特性间的对应关系的基础上,对PL光谱进行分析处理,以确定LED电特性参数。实验结果表明,PL光谱能较好地反映电注入下的电特性,利用PL光谱估计的电参数与电注入下实际测量的电参数能较好地吻合。
Against the problem that the present instruments for testing the optical and electrical characteristics of the LED epitaxial wafers or chips always adopt current injection method,and have many disadvantages such as the complexity,high cost,low efficiency and the microscratches or metal contamination on the wafers of chips,etc.,we propose a contactless method based on photoluminescence（PC）.Determining the relationship between photoluminescence and electroluminescence,and that between optical and electrical characteristics of LEDs,we can obtain the electrical characteristics of LEDs by collecting and analyzing the photoluminescence spectra of LEDs.Experimental results indicate that the photoluminescence spectra can demonstrate the performance and characteristics of a LED device.The experimental results acceptably fit the theoretical electrical characteristics in LED devices.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2011年第7期1051-1056,共6页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(61006053)
重庆市自然科学基金资助项目(CSTC,2008BB3156)
中国博士后科学基金资助项目(1104414)
关键词
LED
光激励
电注入
光致发光(PL)
电特性
LED
photo excitation
electrical injection
photoluminescence（PL）
electrical characteristics
