摘要
研究在掺杂n-i-p-i的抛物多量子阱结构中,由于非简谐修正项所导致的子带间光学二次非线性响应(对应于x^(2)),计算表明,x^(2)比GaAs体材料高一至二个数量级,而其共振跃迁频率位于中红外区域。
In this article, we consider the optical second harmonic nonlinearity (corresponding to X(2)) associated with intersubband transitions in a doped parabolic multiquantum well structure, due to the anharmonic correction. The calculation indicates that the x(2)(2w) is larger than that of the bulk GaAs by 1 to 2 orders of magnitude, and the resonant transition frequencies are in the middle infrared region
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1990年第12期1893-1899,共7页
Acta Physica Sinica
