摘要
用高真空电子束蒸发方法制备了以半导体材料Ｓｉ 为过渡层的Ｃｏ／Ｃｕ／Ｃｏ三明治膜并研究了其巨磁电阻效应。当Ｓｉ 过渡层厚度达到０．９ｎｍ 时，三明治膜中开始出现较强的平面内磁各向异性。在Ｓｉ１．５ｎｍ／Ｃｏ ５ｎｍ／Ｃｕ ３ｎｍ／Ｃｏ ５ｎｍ结构中，在其易轴上得到了５ ．５％ 的巨磁电阻值和０．９ ％／Ｏｅ 的高磁场灵敏度。研究了过渡层Ｓｉ／Ｃｏ 界面之间的相互扩散，发现在过渡层Ｓｉ 与Ｃｏ 层间形成了ＣｏＳｉ 化合物。这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The Co/Cu/Co sandwiches with an amorphous Si buffer layer were prepared by high vacuum electron beam evaporation. The giant magnetoresistance (GMR) effect in these sandwiches was studied. It was found that an obvious in plane magnetic anisotropy appeared in the Co/Cu/Co sandwiches with a Si buffer layer more than 0.9nm. A GMR of 5.5% and a high field sensitivity of 0.9%/Oe along the easy axis in Si 1.5nm/Co 5nm/Cu 3nm/Co 5nm sandwich was obtained. The interdiffusion at Si/Co interface was investigated and a cobalt silicide was found. The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
出处
《功能材料与器件学报》
CAS
CSCD
1999年第3期195-200,共6页
Journal of Functional Materials and Devices
关键词
巨磁电阻效应
硅过渡层
磁各向异性
三明治膜
Giant magnetoresistance
Sensitivity
Si buffer layer
Co/Cu/Co sandwich
