摘要
We have studied erbium germanosilicide (ErSiGe) Ohmic contacts on n-type Si_(1-x)Ge_x substrates with differing Ge concentrations (0≤x≤0.3).Thin layers of Ti (20 nm)/Er (20 nm) were deposited on Si_(1-x)Ge_x substrates and then post-annealed at 600°C for 60 s to form a stable ErSiGe film.The structures of the ErSiGe films and ErSiGe/Si_(1-x)Ge_x interfaces were characterized by Transmission Electron Microscopy measurements (TEM).The TEM images showed that the thicknesses of ErSiGe films and the Si_(1-x)Ge_x substrates were about 60 and 50 nm,respectively.The ErSiGe/Si_(1-x)Ge_x structure had a smooth interface.Moreover,no agglomeration or Ge segregation was observed.The contact resistivity of the ErSiGe/Si_(1-x)Ge_x structures was measured by the specially designed four-terminal Kelvin structures.When the Ge concentration of Si_(1-x)Ge_x substrates increased from 10% to 30%,the specific contact resistivity (c) slightly decreased from 9.0×10 7 ·cm 2 to 7.4×10 7 ·cm 2,indicating that the Ge concentration is not the main effect on the c of the ErSiGe/Si_(1-x)Ge_x Ohmic contacts.
We have studied erbium germanosilicide （ErSiGe） Ohmic contacts on n-type Si_（1-x）Ge_x substrates with differing Ge concentrations （0≤x≤0.3）.Thin layers of Ti （20 nm）/Er （20 nm） were deposited on Si_（1-x）Ge_x substrates and then post-annealed at 600°C for 60 s to form a stable ErSiGe film.The structures of the ErSiGe films and ErSiGe/Si_（1-x）Ge_x interfaces were characterized by Transmission Electron Microscopy measurements （TEM）.The TEM images showed that the thicknesses of ErSiGe films and the Si_（1-x）Ge_x substrates were about 60 and 50 nm,respectively.The ErSiGe/Si_（1-x）Ge_x structure had a smooth interface.Moreover,no agglomeration or Ge segregation was observed.The contact resistivity of the ErSiGe/Si_（1-x）Ge_x structures was measured by the specially designed four-terminal Kelvin structures.When the Ge concentration of Si_（1-x）Ge_x substrates increased from 10% to 30%,the specific contact resistivity （c） slightly decreased from 9.0×10 7 ·cm 2 to 7.4×10 7 ·cm 2,indicating that the Ge concentration is not the main effect on the c of the ErSiGe/Si_（1-x）Ge_x Ohmic contacts.
