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SIMS investigation on the 3C-SiC on Si

SIMS investigation on the 3C-SiC on Si
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出处 《材料科学与工程(中英文版)》 2009年第8期15-17,26,共4页 Journal of Materials Science and Engineering
关键词 SIC薄膜 SIMS 3C 硅片 能量水平 浓度测量 掺杂浓度 电导率测量 3C-SiC SIMS oxygen concentration nitrogen concentration
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参考文献10

  • 1Gali D., Heringer P., Deak Z., et al. Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study. Phys. Rev. B, 2002, 66: 125208.
  • 2Thomas D., Hubert T. G. P., Tsunenobu K., et al. Oxygen in silicon carbide: Shallow donors and deep acceptors. Mater. Sci. and Eng. B, 1999, 61-62: 454-459.
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  • 8SIMS detection limits of selected elements in SiC under normal depth profiling conditions. Available at: http://www.eaglabs.com/publications/appnotes/AN337.pdf.
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